| PART |
Description |
Maker |
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM5964-4UL09 |
HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM1414-10LA-252 |
HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
| TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| AWT6235RM20P8 |
WiBro 3.4V/25.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
